s504tx/s504txr/S504TXRW vishay semiconductors www.vishay.com rev. 1, 05-jun-01 1 (5) document number 85079 mosmic ? for tvtuner prestage with 5 v supply voltage mosmic - mos m onolithic i ntegrated c ircuit electrostatic sensitive device. observe precautions for handling. applications low noise gain controlled input stages in uhf-and vhf- tuner with 5 v supply voltage. g2 g1 rf in s d v dd (v ds ) c block rfc rf out 13650 c block c block rg1 v gg (v rg1 ) agc features easy gate 1 switch-off with pnp switching transistors inside pll high agc-range with less steep slope integrated gate protection diodes low noise figure high gain, medium forward transadmittance (24 ms typ.) improved cross modulation at gain reduction smd package 21 4 3 13628 s504tx marking: x04 plastic case (sot 143) 1 = source, 2 = drain, 3 = gate 2, 4 = gate 1 2 1 43 13629 s504txr marking: x6r plastic case (sot 143r) 1 = source, 2 = drain, 3 = gate 2, 4 = gate 1 2 1 3 4 13633 S504TXRW marking: wx6 plastic case (sot 343r) 1 = source, 2 = drain, 3 = gate 2, 4 = gate 1
s504tx/s504txr/S504TXRW vishay semiconductors www.vishay.com rev. 1, 05-jun-01 2 (5) document number 85079 absolute maximum ratings t amb = 25 c, unless otherwise specified parameter test conditions symbol value unit drain - source voltage v ds 8 v drain current i d 25 ma gate 1/gate 2 - source peak current + i g1/g2sm 10 ma gate 1 - source voltage +v g1s 6 v g -v g1s 1.5 v gate 2 - source voltage + v g2sm 6 v total power dissipation t amb 3 60 c p tot 200 mw channel temperature t ch 150 c storage temperature range t stg 55 to +150 c maximum thermal resistance t amb = 25 c, unless otherwise specified parameter test conditions symbol value unit channel ambient on glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35 m cu r thcha 450 k/w electrical dc characteristics t amb = 25 c, unless otherwise specified parameter test conditions symbol min typ max unit drain - source breakdown voltage i d = 10 a, v g1s = v g2s = 0 v (br)dss 12 v gate 1 - source breakdown voltage + i g1s = 10 ma, v g2s = v ds = 0 + v (br)g1ss 7 10 v gate 2 - source breakdown voltage + i g2s = 10 ma, v g1s = v ds = 0 + v (br)g2ss 7 10 v gate 1 - source leakage current +v g1s = 5 v, v g2s = v ds = 0 +i g1ss 20 na gate 2 - source leakage current + v g2s = 5 v, v g1s = v ds = 0 + i g2ss 20 na drain - source operating current v ds = v rg1 = 5 v, v g2s = 4 v, r g1 = 56 k i dso 8 13 18 ma gate 1 - source cut-off voltage v ds = 5 v, v g2s = 4 v, i d = 20 a v g1s(off) 0.5 1.3 v gate 2 - source cut-off voltage v ds = v rg1 = 5 v, r g1 = 56 k , i d = 20 a v g2s(off) 0.8 1.0 1.4 v remark on driving the mosmic and improving intermodulation behavior: by setting r g1 smaller than 56 k , typical value of i dso will raise and improved intermodulation behavior will be performed.
s504tx/s504txr/S504TXRW vishay semiconductors www.vishay.com rev. 1, 05-jun-01 3 (5) document number 85079 electrical ac characteristics v ds = v rg1 = 5 v, v g2s = 4 v, r g1 = 56 k , i d = i dso, f = 1 mhz , t amb = 25 c, unless otherwise specified parameter test conditions symbol min typ max unit forward transadmittance z y 21s z 20 24 28 ms gate 1 input capacitance c issg1 1.6 2.0 pf feedback capacitance c rss 15 30 ff output capacitance c oss 0.9 pf power gain g s = 2 ms, g l = 0.5 ms, f = 200 mhz g ps 26 db g g s = 3,3 ms, g l = 1 ms, f = 800 mhz g ps 17 21 db agc range v ds = 5 v, v g2s = 1 to 4 v, f = 800 mhz g ps 40 45 db noise figure g s = 2 ms, g l = 0.5 ms, f = 200 mhz f 1 db g g s = 3,3 ms, g l = 1 ms, f = 800 mhz f 1.3 db cross modulation input level for k = 1 % @ 0 db agc f w = 50 mhz, f unw = 60 mhz x mod 90 db v input level for k = 1 % @ 40 db agc f w = 50 mhz, f unw = 60 mhz x mod 100 105 db v dimensions of s504tx in mm 96 12240
s504tx/s504txr/S504TXRW vishay semiconductors www.vishay.com rev. 1, 05-jun-01 4 (5) document number 85079 dimensions of s504txr in mm 96 12239 dimensions of S504TXRW in mm 96 12238
s504tx/s504txr/S504TXRW vishay semiconductors www.vishay.com rev. 1, 05-jun-01 5 (5) document number 85079 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay-semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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